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RARE!! 1 X BLV32F(PHILIPS) RF POWER TRANSISTORS 82 W 12A Gold Plated {1}
RARE!! 1 X BLV32F(PHILIPS) RF POWER TRANSISTORS 82 W 12A Gold Plated {2}
RARE!! 1 X BLV32F(PHILIPS) RF POWER TRANSISTORS 82 W 12A Gold Plated {3}
RARE!! 1 X BLV32F(PHILIPS) RF POWER TRANSISTORS 82 W 12A Gold Plated {4}
RARE!! 1 X BLV32F(PHILIPS) RF POWER TRANSISTORS 82 W 12A Gold Plated {1}
RARE!! 1 X BLV32F(PHILIPS) RF POWER TRANSISTORS 82 W 12A Gold Plated {2}
RARE!! 1 X BLV32F(PHILIPS) RF POWER TRANSISTORS 82 W 12A Gold Plated {3}
RARE!! 1 X BLV32F(PHILIPS) RF POWER TRANSISTORS 82 W 12A Gold Plated {4}

RARE!! 1 X BLV32F(PHILIPS) RF POWER TRANSISTORS 82 W 12A Gold Plated

$28 $40

RARE!! 1 X BLV32F(PHILIPS) RF POWER TRANSISTORS 82 W 12A Gold Plated

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1 X RF power transistors BLV32F PHILIPS
Silicon, NPN, transistor.
The bind is for 1 pcs Manufacturer: BLV32F
Material type: Si
Polarity: NPN
Maximum power dissipation (Pc): 82 W
Maximum allowable collector-base voltage (Ucb): 60 V
Maximum allowable collector-emitter voltage (Uce): 32 V
The maximum permissible emitter-base voltage (Ueb): 4 V
Maximum direct collector current (Ic): 12 A
Limit temperature of the PN junction (Tj): 200 ° C
Boundary frequency of current transfer coefficient (ft): 2000 MHz
The collector junction capacity (Cc): 60 pf
Static current transfer coefficient (hfe): 20
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